Work

Spectroscopic ellipsometry of oxygen-ion-implanted silicon-on-insulator annealed at different temperatures

Year: 2003

Type: conference-paper

Source: IEEE SOS/SOI Technology Conference

DOI: 10.1109/soi.1988.95408

Authors: P. Dutta, G.A. Candela, D. Chandler-Horowitz, M.C. Peckerar

Institutions: National Institute of Standards and Technology, University of Maryland, College Park

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1591829227

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