Work

Gate Tunable Infrared Phonon Anomalies in Bilayer Graphene

Year: 2009

Type: article

Abstract: We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode E(u) ( approximately 0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak can be interpreted as a "charged-phonon" effect observed previously in organic chain conductors and doped fullerenes, which can be tuned in graphene with the gate voltage.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.103.116804

Authors: A. B. Kuzmenko, L. Benfatto, E. Cappelluti, I. Crassee, D. van der Marel, P. Blake, K. S. Novoselov, A. K. Geim

Institutions: University of Geneva, Centro Ricerche Enrico Fermi, Institute for Complex Systems, Sapienza University of Rome, University of Manchester

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1598577744

FWCI: 6.535

Cites: 28

Cited by: 154

Related to: 10