Work

A C-Band 10 Watt GaAs Power FET

Year: 2005

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/mwsym.1984.1131822

Authors: J. Fukaya, M. Ishii, M. Matsumoto, Y. Hirano

Institution: Fujitsu (Japan)

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1602779345

FWCI: 1.649

Cites: 1

Cited by: 6

Related to: 10