Work

Introduction of a hybrid MOSFET-IGBT power switching device utilising a novel Schottky biased minority carrier injector

Year: 2011

Type: conference-paper

Source: European Conference on Power Electronics and Applications

Authors: Martin Westmoreland, Peter J. Ward, Philip Mawby

Institutions: University of Warwick, Anvil Semiconductors (United Kingdom)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W1607365483

FWCI:

Cites: 18

Cited by: 1

Related to: 10