Work

Highly efficient selectively oxidized GaAs (λ=830 nm) vertical-cavity lasers

Year: 2002

Type: conference-paper

Source: IEEE International Semiconductor Laser Conference (ISLC)

DOI: 10.1109/islc.1996.553757

Authors: B. Weigl, G. Reiner, M. Grabherr, K.J. Ebeling

Institution: Universität Ulm

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1607631807

FWCI:

Cites: 4

Cited by: 2

Related to: 10