Work

Hole spin polarization in Ga1−xAlxAs:Mn structures

Year: 2001
Type: article
Abstract: A self-consistent calculation of the electronic properties of ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Al}}_{x}\mathrm{As}:\mathrm{Mn}$ magnetic semiconductor quantum well structures is performed including the Hartree term and the $\mathrm{sp}\ensuremath{-}d$ exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. The available experimental results are compared with the theory.
Language: Latvian
Open Access status: green
OpenAlex ID: W1610396367
FWCI: 1.684
Cites: 17
Cited by: 13
Related to: 10