Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks
Work
Year: 2005
Type: article
Source: Journal of Applied Physics
Institutions Hitachi (Japan), IMEC, ASM International
Cites: 20
Cited by: 69
Related to: 10
FWCI: 3.521
Citation percentile (by year/subfield): 91
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Sustainable Development Goal Affordable and clean energy
Open Access status: closed