Work

Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes 3C , 4H , 6H , 15R , and 21R

Year: 1968

Type: article

Source: Physical Review

DOI: 10.1103/physrev.173.787

Authors: D. W. Feldman, James H. Parker, W. J. Choyke, Lyle Patrick

Institution: Westinghouse Electric (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1621249408

FWCI: 11.87

Cites: 14

Cited by: 563

Related to: 10