Work

Reply to Comment (cond-mat/0311174)

Year: 2004

Type: letter

Abstract: We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree quantitatively with theory of interaction corrections in the ballistic regime, Tτ>1. Our comparison does not involve any fitting parameters.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.cond-mat/0401031

Authors: Pudalov, V. M., Gershenson, M. E., Kojima, H., Brunthaler, G., Bauer, G.

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1640525984

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