Year: 2003
Type: preprint
Abstract: The problem of inter-band tunneling in a semiconductor (Zener breakdown) in a nonstationary and homogeneous electric field is solved exactly. Using the exact analytical solution, the approximation based on classical trajectories is studied. A new mechanism of enhanced tunneling through static non-one-dimensional barriers is proposed in addition to well known normal tunneling solely described by a trajectory in imaginary time. Under certain conditions on the barrier shape and the particle energy, the probability of enhanced tunneling is not exponentially small even for non-transparent barriers, in contrast to the case of normal tunneling.
Source: arXiv (Cornell University)
Author: Ivlev, Boris
Language: English
Subfield: Statistical and Nonlinear Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1644393196