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Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on the GaN (0001) and (1-101) surfaces

Year: 2009

Type: article

Source: Bulletin of the American Physical Society

Authors: Daniel H. Rich, S. Khatsevich, Xingang Zhang, Daniel Dapkus

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1656985743

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