Year: 2001
Type: letter
Abstract: We show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).
Source: arXiv (Cornell University)
Authors: Berciu, Mona, Bhatt, R. N.
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1658072062