Year: 2015
Type: article
Abstract: The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.
Source: Nature Communications
DOI: 10.1038/ncomms8666
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Funders: National Science Foundation, U.S. Department of Energy, Welch Foundation, University of Texas at Austin, National Science Council, Academia Sinica, National Tsing Hua University, Office of Science, Division of Materials Research, Basic Energy Sciences, Air Force Office of Scientific Research
Awards: G1204420465, FIRST PRINCIPLES STUDY OF HYDROGEN W/SOLIDS AND ON SURFACES, G176792190, G222768804, G249512967, FIRST PRINCIPLES INVESTIGATION OF COMPLEX MATERIALS PROPERTIES, G4804009829, G5648016710, G5774867674, Tailoring Light-Matter Interaction in Plasmonic Nanostructures based on Epitaxial Metallic Films: From Classical to Quantum Regime, G7571028772, FIRST PRINCIPLES STUDY OF HYDROGEN W/SOLIDS AND ON SURFACES
OpenAlex ID: W1661147526