Diffusion length variation in 0.5 and 3 MeV proton irradiated heteroepitaxial indium phosphide solar cells
Year: 2002
Type: conference-paper
Abstract: The authors report on the effect of 0.5 and 3.0 MeV proton irradiation on the base diffusion length of InP cells grown on GaAs substrates with In/sub x/Ga/sub 1-x/As graded intermediate layers (C. J. Keavney et al., 1991). The cell efficiency changes due 0.5 and 3 MeV proton irradiations have been explained by the variation of the base diffusion length. The 0.5 MeV protons influence the cell performance more strongly than the 3 MeV protons. Computer simulations were used to determine the variation of the base diffusion length with proton fluence for both the energies. The diffusion length damage coefficient (K/sub L/) has been calculated and is constant with fluence. The damage coefficient for 0.5 MeV protons is an order of magnitude higher than for 3 MeV protons. The effect of carrier removal has been considered in the calculations.>
Authors: R.K. Jain, I. Weinberg, D.J. Flood
Institution: Glenn Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1678107952