Work

Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET

Year: 2012

Type: article

Source: IEEE Transactions on Nanotechnology

DOI: 10.1109/tnano.2012.2199514

Authors: Brahim Benbakhti, Antonio Martinez, Karol Kalna, Geert Hellings, Geert Eneman, Kristin De Meyer, Marc Meuris

Institutions: Liverpool John Moores University, University of Glasgow, Swansea University, IMEC, KU Leuven

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Engineering and Physical Sciences Research Council

Awards: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors, Quantum Simulations of Future Solid State Transistors, Modelling of Carrier Transport in Ultra Thin Body Transistors, G5158058048

OpenAlex ID: W1681340462

FWCI: 0.6

Cites: 35

Cited by: 8

Related to: 10