Work

The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights

Year: 2014

Type: article

Abstract: Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high ON-current of 144 mA/mm and hole mobility of 95.6 cm2/V·s. We deposit Al2O3by atomic layer deposition (ALD) and study the effects of dielectric capping. We observe that the polarity of the transistors alternated from p-type to ambipolar with Al2O3grown on the top. We attribute this transition to the changes for the effective Schottky barrier heights for both electrons and holes at the metal contact edges, which is originated from fixed charges in the ALD dielectric.

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2014.2323951

Authors: Han Liu, Adam T. Neal, Mengwei Si, Yuchen Du, Peide D. Ye

Institution: Purdue University West Lafayette

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Semiconductor Research Corporation, Division of Civil, Mechanical and Manufacturing Innovation

Awards: SNM: Scalable Nanomanufacturing Machine Based on Parallel Optical Antenna Array, G6279869207