Work

An ion-implanted silicon single-electron transistor

Year: 2005

Type: preprint

Abstract: We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Σ$ $\sim$ 250 $μ$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.

Source: arXiv (Cornell University)

DOI: 10.48550/arxiv.cond-mat/0510373

Authors: Chan, V. C., McCamey, D. R., Buehler, T. M., Ferguson, A. J., Reilly, D. J., Dzurak, A. S., Clark, R. G., Yang, C., Jamieson, D. N.

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1720913065

Cites:

Cited by:

Related to: 10