Work

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

Year: 2015

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2015.2423851

Authors: Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara

Institution: Fujitsu (Japan)

Language: English

Topic: Superconducting and THz Device Technology

Subfield: Astronomy and Astrophysics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Internal Affairs and Communications

OpenAlex ID: W1748782602

FWCI: 0.194

Cites: 24

Cited by: 13

Related to: 10