Year: 2015
Type: article
Abstract: Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were investigated for polycrystalline bismuth films obtained by the melt spinning (MS) and electrochemical deposition (ECD) methods. Charge‐carrier concentration and mobilities were calculated assuming the carrier scattering on acoustic deformation potential as the dominant scattering mechanism, parabolicity of holes dispersion law, implying the Lax model for L‐band electrons and neglecting the influence of L‐band holes on conductivity. The experimental results and calculations have demonstrated that the electrical properties of the Bi films studied are strongly affected by the grain‐boundary density.
Source: physica status solidi (b)
Institutions: Belarusian State University, Al-Balqa Applied University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1766321609