Year: 1972
Type: article
Abstract: Single crystal ingots of alloys have been grown using the Bridgman technique. A study of the crystal perfection revealed that in most cases the bulk of each ingot consists of a highly perfect single crystal with no detectable grain boundaries. In addition, the "as‐grown" material is highly homogeneous in both alloy composition and carrier concentration, and is free from metal precipitates. A simplified isothermal annealing technique has been used to obtain various carrier concentrations in alloy samples with , and 0.21. The carrier concentration in these alloys, equilibrated at the liquid + solid/solid solution boundary, has been determined for several annealing temperatures.
DOI: 10.1149/1.2404329
Authors: G. Dionne, J. C. Woolley
Institutions: Hydro-Québec, University of Ottawa
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: University of Ottawa
OpenAlex ID: W1779340858