Work

Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes

Year: 2015

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4930297

Authors: Byung-Jae Kim, Ya-Hsi Hwang, Shihyun Ahn, Fan Ren, Stephen J. Pearton, Jihyun Kim, Tae Sung Jang

Institutions: University of Florida, Korea University, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Defense, Defense Threat Reduction Agency, Samsung, Division of Electrical, Communications and Cyber Systems

Awards: G1291071805, G5008918744, G5756752099, EAGER: Novel high electron mobility transistor designs

OpenAlex ID: W1805358460

FWCI: 0.747

Cites: 17

Cited by: 15

Related to: 10