In Situ Laser Light Scattering: I . Detection of Defects Formed during Silicon Molecular Beam Epitaxy
Year: 1989
Type: article
Abstract: In situ elastic laser light scattering (LLS) is a sensitive and noninvasive method for following changes in surface roughness during layer processing. LLS during (001) silicon MBE at 750°–850°C shows features which relate to the formation of extended defects. An intense peak is observed during initial growth when epilayer dislocation densities are high. SIMS and TEM data show that this peak arises from regions of locally high carbon concentration at the layer‐substrate interface. During pre‐epitaxial bake, radial thermal decomposition of thin passivating surface oxide and subsequent "thermal roughening" of exposed silicon both give rise to LLS features, and are considered as possible sources of inhomogeneity in the distribution of carbon existing on the substrate surface prior to deposition. During continued layer growth, a steady rise in LLS intensity is punctuated by abrupt increases due to the impact of silicon dust particles and consequent growth of stacking faults.
DOI: 10.1149/1.2096405
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1839440346