Work

Sub 0.1 μm SOI MOSFETs with counter doping into uniformly and heavily doped channel region

Year: 2002

Type: conference-paper

Source: Conference digest

DOI: 10.1109/drc.1995.496228

Authors: K. Suzuki, A. Satoh, T. Sugii

Institution: Fujitsu (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1849429692

FWCI:

Cites:

Cited by: 2

Related to: 10