Work

Raman spectroscopy of electrochemically gated graphene transistors: Geometrical capacitance, electron-phonon, electron-electron, and electron-defect scattering

Year: 2015

Type: article

Abstract: This is a comprehensive Raman scattering study of electrochemically gated graphene transistors. A robust, highly accurate determination of the Fermi level, electron-phonon coupling, and defect scattering rates is achieved. Fermi energies as high as 700 meV above the Dirac point were achieved in ambient conditions, without damaging graphene. This opens exciting perspectives for optoelectronics.

Source: Physical Review B

DOI: 10.1103/physrevb.91.205413

Authors: Guillaume Froehlicher, Stéphane Berciaud

Institutions: Centre National de la Recherche Scientifique, Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Agence Nationale de la Recherche, Université de Strasbourg, Centre National de la Recherche Scientifique

Awards: Interaction between individual semiconductor Quantum Dots and Graphene monolayers: optical studies and electrical control of energy and charge transfer., G231346168, G4891159397, G509002478