Work

Resistive switching in metallic Ag 2 S memristors due to a local overheating induced phase transition

Year: 2015

Type: article

Abstract: Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state resistances are quantitatively understood by taking the local overheating of the junction volume and the resulting structural phase transition of the Ag2S matrix into account. Our results demonstrate that the essential characteristics of the resistive switching in Ag2S based nanojunctions can be routinely optimized by suitable sample preparation and biasing schemes.

Source: Nanoscale

DOI: 10.1039/c5nr02536b

Authors: Agnes Gubicza, Miklós Csontos, András Halbritter, György Mihály

Institution: Budapest University of Technology and Economics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: European Commission, Hungarian Scientific Research Fund, Seventh Framework Programme

Awards: Coherent spin manipulation in hybrid nanostructures, G3266778773, G5898597304