A RESURF-Enhanced p-Channel Trench SOI LDMOS With Ultralow Specific on-Resistance
Work
Year: 2014
Type: article
Authors Kun Zhou, Xiaorong Luo, Qing Xu, Zhaoji Li, Bo Zhang
Institutions University of Electronic Science and Technology of China, National Engineering Research Center of Electromagnetic Radiation Control Materials
Cites: 22
Cited by: 30
Related to: 10
FWCI: 2.974
Citation percentile (by year/subfield): 83.44
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Grant IDS 61306094, 61176069