Work

Ohmic Contact characterization Using Image Processing

Year: 2015

Type: article

Abstract: The Ti/Al/Ni/Au films deposited by electron beam evaporation on n type GaN was demonstrated as a suitable solution for low resistive and thermally stable contact to n-type GaN. The surface morphology of Ti/Al/Ni/Au and Ti/Al contacts were studied as a function of the annealing process conditions using image processing techniques. The algorithm was implemented using the MATLAB software. Using the algorithm made, the area occupied by the pores and porosity in the ohmic contact structures were obtained.

Source: International Journal of Electrical and Computer Engineering (IJECE)

DOI: 10.11591/ijece.v5i6.pp1347-1353

Authors: Shashikala B.N., Nagabhushana B.S.

Institutions: Siddaganga Institute of Technology, B.M.S. College of Engineering

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funders: Indian Institute of Science, Indian Institute of Technology Bombay

OpenAlex ID: W1894001550

FWCI:

Cites: 18

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Related to: 10