Work

Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules

Year: 2015

Type: conference-paper

Abstract: With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

Source: International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

DOI: 10.1109/icpe.2015.7167881

Authors: Rui Wu, Liudmila Smirnova, Huai Wang, Francesco Iannuzzo, Frede Blaabjerg

Institutions: Aalborg University, Lappeenranta-Lahti University of Technology, Università degli studi di Cassino e del Lazio Meridionale

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Aalborg Universitet

OpenAlex ID: W1896017968