Year: 2009
Type: article
Abstract: We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO(2)) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Source: ACS Nano
DOI: 10.1021/nn900744z
Authors: Max C. Lemme, David C. Bell, James R. Williams, Lewis A. Stern, Britton W. H. Baugher, Pablo Jarillo-Herrero, Charles M. Marcus
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: Alexander von Humboldt-Stiftung
OpenAlex ID: W1902346400