Terahertz intersubband emission from silicon-germanium quantum cascades
Year: 2003
Type: conference-paper
Abstract: Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.
Authors: R.W. Kelsall, Z. Ikonic, P. Harrison, S.A. Lynch, R. Bates, D.J. Paul, D.J. Norris, San Lin Liew, A.G. Cullis, D.J. Robbins, P. Murzyn, C.R. Pidgeon, D. D Arnone
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1908532264