Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors
Year: 2015
Type: article
Source: Nanoscale
DOI: 10.1039/c5nr02019k
Institution: Sungkyunkwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1929568186