Work

Scaling Limit of the MOS Transistor--A Ballistic MOSFET--

Year: 2001

Type: article

Source: IEICE Transactions on Electronics

Author: Kenji Natori

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1933394972

FWCI: 4.406

Cites:

Cited by: 50

Related to: 10