Work

Epitaxial GeSi strained layer on SIMOX for confinement of threading dislocations

Year: 2002

Type: conference-paper

Source: IEEE SOS/SOI Technology Conference

DOI: 10.1109/sossoi.1990.145741

Authors: E. Cortesi, F. Namavar, N.M. Kalkhoran, J.M. Manke, B.L. Buchanan

Institution: Spire Corporation (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1953698912

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