Work

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Year: 2012

Type: article

Source: Nature Communications

DOI: 10.1038/ncomms2110

Authors: Jun Yao, Jian Lin, Yanhua Dai, Gedeng Ruan, Zheng Yan, Lei Li, Lin Zhong, Douglas Natelson, James M. Tour

Institutions: University of Houston, Center for Nanoscale Science and Technology, Rice University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Army Research Office

Award: CSR---EHS: Coordinated Energy Optimization of Mobile Embedded Systems with User Information

OpenAlex ID: W1963704125

FWCI: 8.951

Cites: 33

Cited by: 189

Related to: 10