Work

Boron distribution in silicon after multiple pulse excimer laser annealing

Year: 2005

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2032603

Authors: E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscunà, L. Mariucci

Institutions: University of Oslo, KTH Royal Institute of Technology, Institute for Microelectronics and Microsystems

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1963866718

FWCI: 0.409

Cites: 16

Cited by: 9

Related to: 10