Work

A high-speed P-channel random access 1024-bit memory made with electron lithography

Year: 1975

Type: article

Source: IEEE Journal of Solid-State Circuits

DOI: 10.1109/jssc.1975.1050567

Authors: R.C. Henderson, R.F. Pease, A.M. Voshchenkov, R.F. Helm, R.L. Wadsack

Institution: AT&T (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964113047

FWCI: 3.805

Cites: 7

Cited by: 20

Related to: 10