Year: 1998
Type: article
Abstract: To control the normal resistance of Ba1-x KxBiO3 (BKBO) artificial grain boundary junctions, the influence of Ar+ beam irradiation on BKBO junctions on MgO (100) bicrystal substrates was investigated. Contrary to our expectation, the properties of all junctions were found to be improved. In the most marked changes, the critical current density increased from 2.3 kA/cm2 to 31 kA/cm2, while the normalized junction resistivity decreased from 1.4 × 10-6 Ω·cm2 to 1.4 × 10-7 Ω·cm2. No change was observed in the gap voltages and the critical current density of the BKBO films.
DOI: 10.1143/jjap.37.l728
Authors: Yukihiko Wada Yukihiko Wada, Tetsuya Takami Tetsuya Takami, Ken'ichi Kuroda Ken'ichi Kuroda, Tatsuo Ozeki Tatsuo Ozeki
Institution: Mitsubishi Electric (Japan)
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1964767801