Assessment of interface state density in silicon metal-oxide-semiconductor transistors at room, liquid-nitrogen, and liquid-helium temperatures
Work
Year: 1990
Type: article
Source: Journal of Applied Physics
Authors I.M. Hafez, G. Ghibaudo, F. Balestra
Cites: 9
Cited by: 42
Related to: 10
FWCI: 2.083
Citation percentile (by year/subfield): 85.49
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed