Work

Nonvolatile Poly-silicon Memory Device with Oxide-Nitride-Oxynitride Stack Structure on Glass for Flat Panel Display

Year: 2009

Type: article

Source: Molecular Crystals and Liquid Crystals

DOI: 10.1080/15421400802619354

Authors: Sungwook Jung, Jaehyun Jo, Kyungsoo Jang, Hyukjoo Son, Jaehong Kim, Jongkyu Heo, Sunghyun Hwang, Kyunghae Kim, Byoung-Deog Choi, Junsin Yi

Institution: Sungkyunkwan University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1965060253

FWCI:

Cites: 11

Cited by: 2

Related to: 10