Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation
Year: 2011
Type: article
Source: Applied Physics B
Authors: E. Estacio, S. Takatori, M. H. Pham, T. Yoshioka, T. Nakazato, M. Cadatal-Raduban, T. Shimizu, N. Sarukura, M. Hangyo, C. T. Que, M. Tani, T. Edamura, M. Nakajima, J. V. Misa, R. Jaculbia, A. Somintac, A. Salvador
Institutions: Institute of Laser Engineering, The University of Osaka, The University of Osaka, University of Fukui, Research Center for Development of Far-Infrared Region, University of Fukui, Hamamatsu Photonics (Japan), The Institute for Solid State Physics, The University of Tokyo, The University of Tokyo, University of the Philippines System, University of the Philippines Diliman
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1965386459