Band gap narrowing and radiative efficiency of silicon doped GaN
Year: 2008
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.2919775
Authors: H. P. D. Schenk, S. I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, S. Khatsevich, D. H. Rich
Institution: Ben-Gurion University of the Negev
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1966332662