Work

Impact of proton irradiation on deep level states in n-GaN

Year: 2013

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4816423

Authors: Z. Zhang, A. R. Arehart, E. Cinkilic, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, B. McSkimming, J. S. Speck, S. A. Ringel

Institutions: University of California, Santa Barbara, Vanderbilt University, The Ohio State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1966370851

FWCI: 3.755

Cites: 30

Cited by: 78

Related to: 10