Year: 2010
Type: article
Abstract: We prepared the SnTe/PbSe superlattices, and measured electrical and optical properties at room temperature. The superlattice showed semimetallic properties resulting from type-II band offset between SnTe and PbSe. Though nondope SnTe had hole concentration around 3×1020 cm−3, nondope SnTe/PbSe superlattices with thin SnTe layers showed n-type conduction with carrier concentrations less than 2×1018 cm−3 and carrier mobility comparable or higher than that of PbSe, keeping semimetallic properties in the optical transmission spectra. These properties are discussed with the band offset of SnTe/PbSe heterojunction.
Source: Physics Procedia
Authors: Akihiro Ishida, Tomohiro Yamada, Takuro Tsuchiya, Yoku Inoue, Takuji Kita
Institutions: Shizuoka University, Toyota Motor Corporation (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W1966502303