Carbon‐Based Field‐Effect Transistors for Nanoelectronics
Year: 2009
Type: review
Abstract: In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their π-conjugated system. For each of these materials, recent progress in its synthesis, electrical and structural characterization, as well as its implementation into various gate configurations is surveyed, with emphasis laid onto nanoscale aspects of the FET design and the attainable device performance. Finally, promising future research directions, such as the integration of different carbon nanostructures into novel device architectures, are outlined.
Source: Advanced Materials
Authors: Marko Burghard, Hagen Klauk, Klaus Kern
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1966639262