Get started
Work

Bulk Band Gaps in Divalent Hexaborides

Year: 2002
Type: article
Abstract: Complementary angle-resolved photoemission and bulk-sensitive k-resolved resonant inelastic x-ray scattering of divalent hexaborides reveal a >1 eV X-point gap between the valence and conduction bands, in contradiction to the band overlap assumed in several models of their novel ferromagnetism. This semiconducting gap implies that carriers detected in transport measurements arise from defects, and the measured location of the bulk Fermi level at the bottom of the conduction band implicates boron vacancies as the origin of the excess electrons. The measured band structure and X-point gap in CaB6 additionally provide a stringent test case for many-body quasiparticle band calculations.
DOI: 10.1103/physrevlett.89.157601
Authors: J. D. Denlinger, J. A. Clack, J. W. Allen, G.-H. Gweon, D. M. Poirier, C. G. Olson, J. L. Sarrao, A. D. Bianchi, Z. Fisk
Institutions: Lawrence Berkeley National Laboratory, Advanced Light Source, University of Michigan, Iowa State University, Ames National Laboratory, Florida State University, National High Magnetic Field Laboratory
Language: English
Open Access status: green
OpenAlex ID: W1966800153
FWCI: 5.952
Cites: 25
Cited by: 99
Related to: 10