Year: 1991
Type: article
Abstract: Various approaches to wafer bonding technology are reviewed. Bonding kinetics are discussed as well as different mechanical and chemical thinning techniques. The structural and electrical qualities of state‐of‐the‐art bonded SOI silicon films and devices built in them are detailed. Problems faced by this technology are evaluated.
DOI: 10.1149/1.2085575
Author: W. P. Maszara
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: North Carolina State University
OpenAlex ID: W1966863561