Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2 films
Work
Year: 1992
Type: article
Source: Journal of Applied Physics
Institutions Oki Electric Industry (Japan), Waseda University
Cites: 30
Cited by: 39
Related to: 10
FWCI: 5.174
Citation percentile (by year/subfield): 88.53
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Sustainable Development Goal Clean water and sanitation
Open Access status: closed