Work

Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors

Year: 2015

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.4916882

Authors: Byung-Jae Kim, Shihyun Ahn, Ya-Hsi Hwang, Fan Ren, Stephen J. Pearton, Jihyun Kim, Ming-Lan Zhang

Institutions: University of Florida, Korea University, Hebei University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1967264012

FWCI: 0.149

Cites: 26

Cited by: 3

Related to: 10