Work

Electronic structure and symmetry of valence states of epitaxial NiTiSn and NiZr0.5Hf0.5Sn thin films by hard x-ray photoelectron spectroscopy

Year: 2011

Type: article

Abstract: The electronic band structure of thin films and superlattices made of Heusler compounds with NiTiSn and NiZr0.5Hf0.5Sn composition was studied by means of polarization dependent hard x-ray photoelectron spectroscopy. The linear dichroism allowed to distinguish the symmetry of the valence states of the different types of layered structures. The films exhibit a larger amount of "in-gap" states compared to bulk samples. It is shown that the films and superlattices grown with NiTiSn as starting layer exhibit an electronic structure close to bulk materials.

Source: Applied Physics Letters

DOI: 10.1063/1.3665621

Authors: Xeniya Kozina, Tino Jaeger, Siham Ouardi, Andrei Gloskowskij, Gregory Stryganyuk, Gerhard Jakob, Takeharu Sugiyama, Eiji Ikenaga, Gerhard H. Fecher, Claudia Felser

Institutions: Johannes Gutenberg University Mainz, SPring-8, Japan Synchrotron Radiation Research Institute, Max Planck Institute for Chemical Physics of Solids

Language: English

Topic: Heusler alloys: electronic and magnetic properties

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1967299955

FWCI: 0.623

Cites: 19

Cited by: 11

Related to: 10