Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors
Year: 2012
Type: article
Source: The European Physical Journal B
Authors: A. Kumar, P. K. Ahluwalia
Institution: Himachal Pradesh University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1967584621